Reduction of the expression of AtGRF genes by transgenic miR396 overexpression in leaf polarity mutants asymmetric leaves1 (as1) and as2 resulted in plants with enhanced leaf adaxial-abaxial defects, as a consequence of reduced cell proliferation. Moreover, transgenic miR396 overexpression markedly decreased the cell division activity and the expression of cell cycle-related genes, but resulted in an increased percentage of leaf cells with a higher ploidy level, indicating that miR396 negatively regulates cell proliferation by controlling entry into the mitotic cell cycle. miR396 is mainly expressed in the leaf cells arrested for cell division, coinciding with its roles in cell cycle regulation.

These results together suggest p38 kinase assay that cell division activity mediated by Cl-amidine in vivo miR396-targeted AtGRFs is important for

polarized cell differentiation along the adaxial-abaxial axis during leaf morphogenesis in Arabidopsis.”
“We present the structural and electrical properties of (011) preferred polycrystalline (Poly) and multidomain (020) epitaxial (Epi) VO2 thin films grown at different temperature (T-s) and on different substrates with variable defects. These defects cause variation in strain, metal-insulator transition (MIT) temperature (T-MIT), activation energy (Delta E-a), and charge carrier type in insulating phase. Both the Poly-and Epi-VO2 behave n-type conductivity when grown at relative low T-S. As T-S increases, defects related acceptor density increases to alter conductivity from n- to p-type in the Poly-VO2, while in the Epi-VO2 donor density increases to maintain n-type conductivity. Moreover, the strain along monoclinic a(m) axis dramatically reverses from tensile to compressive in both the Poly- (848 K < T-S < 873 K) and Epi-VO2 (873 K < T-S < 898 K), and eventually approaches to a constant in the Poly-VO2 (T-S >= 898 K) in particular. T-MIT decreases with increasing the carrier density click here independent of the conductive type in the lightly doped Poly- and Epi-VO2;

however, this trend is reversed in heavily doped n-type Epi-VO2 with a higher T-MIT due to the formation of large quantity of small polarons related with V4+-V2+ pair. Delta E-a is associated with the carrier density and thus the strain or strained interfacial layer thickness in the Poly- or Epi-VO2. The larger tensile strain or thicker strained layer leads to lower carrier density and higher Delta E-a, while the constant strain produces saturated Delta E-a. (C) 2011 American Institute of Physics. [doi: 10.1063/1.3609084]“
“Non-biological artificial liver support (ALS) devices aim to remove albumin-bound and water-soluble toxins arising as a result of liver failure. They do not directly improve the liver synthetic capacity. The currently most used devices combine haemodialysis with albumin dialysis (MARS) or plasma separation and filtration (Prometheus).