The morphologies of the alumina mask, deposited metal layer, and etched silicon were determined by field-emission scanning electron microscopy (FE-SEM, JSM-6701 F,

JEOL Ltd., Akishima-shi, Tokyo, Japan) and atomic force microscopy (AFM, Digital Instrument NanoScope IIIa, Tonawanda, NY, USA) using silicon conical tips with a typical radius of curvature of 10 nm. Results and discussion Preparation of porous alumina mask on silicon substrate We previously reported that the transfer of a porous pattern of anodic alumina into a silicon substrate can be achieved by removing silicon oxide, which is produced by the localized anodization of the silicon substrate underneath the barrier layer of anodic alumina [20, 21]. The periodicity of the hole arrays obtained on the silicon substrate, which was basically BMS-907351 clinical trial determined by the pore interval of the upper anodic porous alumina, was approximately 100 nm, corresponding to a formation voltage of 40 V. However, the hole arrays obtained were shallow concave arrays with a depth of approximately 10 nm. Here, we attempted to fabricate sub-100-nm silicon nanohole arrays with a high aspect ratio using metal-assisted chemical etching. For the subsequent pattern transfer, see more it was essential to stop anodization at an appropriate stage when current is at its minimum in the current-time curve.

The anodization behavior was described in detail in our previous reports [20, 21]. When anodization was stopped at the minimum current, the morphology of the anodic porous alumina remaining on the silicon substrate was selleck kinase inhibitor observed using SEM. On the surface, pore initiation proceeded preferentially at the grain boundary of the aluminum deposited by sputtering, as shown in Figure 2a. SB-3CT The top diameter of pores in the anodic alumina film was approximately 20 nm, smaller than that of the bottom part following the well-established pore initiation mechanism [23]. Although the pore arrangement was random on the film surface, the regularity of pore arrangement

improved gradually in the direction of pore depth by self-ordering. After the chemical dissolution of the barrier layer in phosphoric acid, the cross section of the alumina mask was observed. As shown in Figure 2b, no barrier layer at the bottom part of each pore in the porous alumina film was observed. In other words, a through-hole alumina mask could be obtained directly on a silicon substrate by the selective removal of the barrier layer because the thickness of the barrier layer decreases by approximately half during the unique deformation of the bottom part of anodic porous alumina [24, 25]. Figure 2 SEM images of porous alumina mask. (a) Surface and (b) cross-sectional SEM images of porous alumina mask formed on the Si substrate after anodization.